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| SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - JUNE 1996 FEATURES * Fast Switching * High hFE. COMPLEMENTARY TYPE - PARTMAKING DETAIL - 7 BST39 C BST16 AT1 C B SOT89 E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 400 350 5 1 500 1 -65 to +150 UNIT V V V A mA W C ELECTRICAL CHARACTERISTICS (at T amb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Output Capacitance Input Capacitance Transition Frequency SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) VBE(sat) hFE Cobo Cibo fT 70 40 2 20 pF pF MHz MIN. 400 350 5 20 0.5 1.3 MAX. UNIT V V V nA V V CONDITIONS. IC=10A IC=1mA* IE=10A VCB=300V IC=50mA, IB=4mA IC=50mA, IB=4mA IC=20mA, VCE=10V* VCB=10V, f=1MHz VEB=10V, f=1MHz IC=10mA, VCE=10V, f=5MHz * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT458 datasheet. 3 - 77 |
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